ELECTRODEPOSITION AND CHARACTERIZATION OF ZINC SELENIDE (ZNSE) NANO AND THIN FILMS

AUTHOR: NWEZE CHRISTIAN IKECHUKWU

DEPARTMENT: PHYSICS AND INDUSTRIAL PHYSICS

AFFILIATION: NNAMDI AZIKIWE UNIVERSITY, AWKA

Zinc selenide (ZnSe) nano and thin films have been successfully deposited on two different substrates (Indium doped Tin Oxide, ITO, and Zinc) using electrodeposition (ED) method at different bath parameters. The absorbance was measured using Janway 6405 UV/visible spectrophotometer in the wavelength range of 200nm – 900nm. Investigation reveals that the absorbance of nano films (i.e. slide W and slide E) is in the range of 0.030 – 0.135 and 0.070 – 0.149 respectively and the absorbance of thin films (i.e. slide A and slide Q) is in the range of 0.15 – 0.37 and 0.10 – 0.31 respectively this makes the material suitable for photovoltaic cells and optical component in higher laser window. Further investigation reveals that nano films and thin films have bandgap energy of 3.1eV and 2.8eV respectively, the wide bandgap makes the material useful for fabrication of blue and green light emitting devices, light emitting laser diode and photocell window layer. Again nano films and thin films have thickness range of 66 – 85nm and 101 – 278nm, refractive index range of 1.50 – 2.25nm and 2.20 – 2.60nm, transmittance range of 71 – 92% and 43 – 71%, and reflectance range of 0.135 – 0.035 and 0.200 – 0.140 respectively, these make the material useful as anti reflection coatings, lenses for higher power IR laser, windows, mirrors and optical components. Nano films and thin films show extinction coefficient range of 0.0025 – 0.0110 and 0.0110 – 0.0290, and optical conductivity range of 0.1 x 1013 – 3.3 x 1013 s-1 and 0.4 x 1013 – 11.8 x 1013 s-1 at wavelength range of 200nm – 900nm respectively. From the XRD results, the chemically deposited films on the glass substrate and metal substrate are of hexagonal and cubic structures respectively. Electrical analysis of the deposited films showed that nano films have higher resistivity than thin films due to large surface – volume ratio and quantum confinement size effect, this high resistivity of ZnSe films makes the material suitable as window layer, photoluminescence and electroluminescence devices. 

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